power transistors 1 publication date: april 2003 sjd00276bed 2SD2549 silicon npn triple diffusion planar type for power amplification features ? high forward current transfer ratio h fe which has satisfactory lin- earity ? low collector-emitter saturation voltage v ce(sat) ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c 1.4 0.2 1.6 0.2 0.8 0.1 0.55 0.15 2.54 0.30 5.08 0.50 123 2.6 0.1 2.9 0.2 4.6 0.2 3.2 0.1 3.0 0.5 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 solder dip unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 80 v collector-emitter voltage (base open) v ceo 80 v emitter-base voltage (collector open) v ebo 6v collector current i c 3a peak collector current i cp 5a collector power p c 20 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: base 2: collector 3: emitter to-220d-a1 package parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 30 ma, i b = 080v base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v collector-emitter cutoff current (e-b short ) i ces v ce = 70 v, v be = 0 100 a collector-emitter cutoff current (base open) i ceo v ce = 70 v, i b = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 01ma forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 70 250 ? h fe2 v ce = 4 v, i c = 3 a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 0.7 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 a 0.5 s storage time t stg v cc = 50 v 4.5 s fall time t f 0.5 s note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p h fe1 70 to 150 120 to 250
2SD2549 2 sjd00276bed v ce(sat) ? i c h fe ? i c safe operation area p c ? t a i c ? v ce i c ? v be r th ? t 0 160 40 120 80 0 30 25 20 15 10 5 collector power dissipation p c (w) ambient temperature t a ( c) (1) (2) (3) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)without heat sink (p c =2w) 012 210 48 6 0 2 6 4 8 collector current i c (a) collector-emitter voltage v ce (v) i b =100ma 90ma t c =25?c 80ma 70ma 60ma 50ma 40ma 30ma 20ma 10ma 0 1.2 0.2 1.0 0.4 0.8 0.6 0 8 6 4 2 base-emitter voltage v be (v) collector current i c (a) ta=25?c 10 ? 3 10 ? 2 10 ? 2 10 ? 1 1 10 10 ? 1 110 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) ta=25?c 10 ? 2 10 ? 1 110 1 10 3 10 2 10 1 forward current transfer ratio h fe collector current i c (a) ta=25?c 1 10 100 0.1 1 10 collector current i c (a) collector-emitter voltage v ce (v) i cp i c t=10ms t=1ms t=1s non repetitive pulse t c =25?c 1 10 10 2 10 3 10 2 10 1 10 ? 1 time t (s) thermal resistance r th ( c/w) note: r th was measured at ta=25?c and under natural convection. (1)p t =10v 0.2a(2w) and without heat sink (2)p t =10v 0.8a(8w) and with a 100 100 2mm al heat sink (1) (2)
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